SOI wafers feature a thin layer of silicon on top of an insulating oxide layer, offering superior electrical isolation, reduced parasitic capacitance, and enhanced performance in RF and low-power applications. Kanetora provides tailored SOI wafers for advanced semiconductor needs.
| Layer | Item | Min. | Max. |
|---|---|---|---|
| Device Layer (Top) | Crystal Growth Method | CZ, FZ | |
| Diameter | 2" – 8" | ||
| Thickness | 0.05 µm | >300 µm | |
| Tolerance | ±5% | ||
| Crystal Orientation | (100), (110), (111) | ||
| Type / Dopant | P/Boron, N/Phosphorus, Intrinsic | ||
| Resistivity | 0.001 ohm-cm | >20,000 ohm-cm | |
| Buried Oxide (BOX) Layer | Thickness | 0.1 µm | 3 µm |
| Tolerance | ±5% | ||
| Back Surface | Etched or Polished with Oxide | ||
| Handle Layer | Crystal Growth Method | CZ, FZ | |
| Diameter | 2" – 8" | ||
| Thickness | 200 µm | 750 µm | |
| Tolerance | ±5% | ||
| Crystal Orientation | (100), (110), (111) | ||
| Type / Dopant | P/Boron, N/Phosphorus, Intrinsic | ||
| Resistivity | 0.001 ohm-cm | >20,000 ohm-cm | |
| Overall Wafer | TTV | <5 µm | |
| BOW | <20 µm | ||
| Lead time | 9 – 12 weeks (on average) |
At Kanetora, we proudly support our partners in the semiconductor industry with high-quality wafers, a diverse product portfolio, and flexible customization tailored to every technical need.
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