Epitaxial wafers (EPI wafers) are essential for high-performance semiconductor devices requiring enhanced electrical properties and precise doping control. At Kanetora, we provide high-quality EPI wafers with uniform thickness, low defect density, and excellent surface finish, supporting advanced applications in power, RF, and logic devices.
EPI Wafer
| Diameter (mm) |
Epi Dopant | Orientation | Structure Design | Epi Resistivity (ohm-cm) |
Epi Thickness (µm) |
Substrate | Notes |
|---|---|---|---|---|---|---|---|
| 150 | Boron (B) / Phosphorus (P) |
100 / 111 | Single or multiple layers |
0.02 ~ 1000 | 1 ~ 150 | Polished, SOI wafer, or others |
Turnkey solution or buried layer Epi service |
| 200 | Boron (B) / Phosphorus (P) |
100 / 111 | Single or multiple layers |
0.02 ~ 1000 | 1 ~ 150 | Polished, SOI wafer, or others |
Turnkey solution or buried layer Epi service |
| 300 | Boron (B) / Phosphorus (P) |
100 / 111 | Single or multiple layers |
0.02 ~ 1000 | 1 ~ 150 | Polished, SOI wafer, or others |
Turnkey solution or buried layer Epi service |
At Kanetora, we proudly support our partners in the semiconductor industry with high-quality wafers, a diverse product portfolio, and flexible customization tailored to every technical need.
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