Compound semiconductor wafers, such as GaN and SiC, enable high-efficiency, high-frequency, and high-voltage applications that silicon alone cannot achieve. Kanetora offers advanced compound wafers to support next-generation power electronics, communication, and sensing technologies.
Gallium Nitride (GaN) wafers are essential for high-power, high-frequency, and high-efficiency applications. At Kanetora, we provide high-quality GaN wafers with excellent crystalline properties, supporting next-generation technologies in RF communication, power electronics, and optoelectronics.
| Growth Method | HVPE | ||
|---|---|---|---|
| Fe | Ge | Undoped | |
| Conduct Type | Semi-Insulating | N | N |
| Type/Dopant | Fe | Ge | Undoped |
| Size | 10×10.5 mm / 100.5 ± mm | ||
| OF location/length | <1-100> ± 0.5° / 32.0 ± 1.0 mm | ||
| IF location/length | <11-20> ± 3° / 18.0 ± 1.0 mm | ||
| Orientation | C-plane <0001> off angle toward M-Axis 0.35° ± 0.15° | ||
| Resistivity (300K) | ≥1E6 ohm-cm | <0.050 ohm-cm | <0.5 ohm-cm |
| EPD | (1 ~ 9)E5/cm² | 5E5 ~ 3E6/cm² | (1 ~ 3)E6/cm² |
| Ra (nm) | Front surface Ra ≤ 0.2 nm | ||
| TTV (µm) | ≤ 15 | ||
| Bow (µm) | ≤ 20 | ||
| Warp (µm) | ≤ 20 | ||
| Epi-ready | Yes | ||
At Kanetora, we proudly support our partners in the semiconductor industry with high-quality wafers, a diverse product portfolio, and flexible customization tailored to every technical need.
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